[sdiy] DROID3, Another AVR Synth?
ASSI
Stromeko at compuserve.de
Sat Feb 11 10:23:17 CET 2006
On Samstag, 11. Februar 2006 02:53, karl dalen wrote:
> > Re-flashing does
> > help with curing a potential (intrinsic) retention fail. Bits that
> > fail due to cycling (or wear-out) are an entirely different
> > problem, even though some of them may show up as (extrinsic)
> > retention fails.
>
> Is that then a process dependant filure cause, or?
No, at least not along the line you seem to be thinking of. The general
assumption is that all manufacturing defects are removed during test,
so the defects due to wear-out are not directly process related. The
distinction between intrinsic (what the median of some large population
does and what the distribution is) and extrinsic (what systems do that
fall outside that distribution) is due to the need to employ different
statistical models.
> The difference between TI's 100 years and Atmels 10 years is quite
> vast!
Yeah, and it's some of the biggest marketing bullshit I've ever seen (I
think you refer to the MSP430 datasheets). Welcome to the world of
Arrhenius' law: draw a diagram log10(t) over 1000/T (T in Kelvin!).
25°C is then around 3.35, 85°C at 2.79 and 250°C is at 1.91. 100 years
with some margin is 10^6 hours. Now we don't know their activation
energy but let's say TI tests the Flash at 250°C and it fails after
four days at that temperature: 10^2 hours. Draw a straight line between
those two points and read the time at 85°C: 6-2=4 decades over 1.44
makes 6-4.44=1.56 decades over 0.56 and that is some 30000 hours.
Suddenly doesn't look so good anymore, eh? Give them the benefit of
doubt and say that they'd really make 10^7 hours at RT (which is not
too outrageous) and guarantee just 100 years to have some margin and
you get just over 11 years retention time at 85°C, which is then
equivalent to the Atmel spec (which I didn't read).
Physics is the same for all Flash memories and refuses to bow to the
will of marketing. Unfortunately customers still get confused. The fact
is one could qualify such a memory for 100 of data retention under
worst case conditions if you throw enough money and engineering at it.
No manufacturer in their right mind will however specify any longer
time than what the market pays for as the cost function involved is an
exponential. Under typical conditions any modern technology has
retention times far longer than the system lifetime. Put differently,
the failure rate due to retention is an insignificant part of the
overall failure rate. If you worry about your MCU working in 20 years,
you need to know the FIT rate (failure in time: how many chips fail
until 10^9 seconds of lifetime). But then again, unless you have
millions of those systems in the field, that number is of no
consequence to you for the typical values you can expect. The chances
to kill the MCU earlier than the extrapolated lifetime by some
haphazard event are much greater, IMHO.
Achim.
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