[sdiy] Charge diffusion conceptual confusion
ASSI
Stromeko at nexgo.de
Fri Apr 1 00:43:11 CEST 2011
On Thursday 31 March 2011, David wrote:
> Now, my problem. In an N type, there are literally free electrons which
> can move and drift and that's easy for me to conceptualize.
No, they are not free electrons in the same sense they are free in metals.
Forget this picture of the electrons if you want to really understand how a
semiconductor works. The n-type electrons can only move when put into the
conduction band by thermal energy (the donors need to be ionized). How many
of them do depends on temperature (shape of the Fermi-Dirac distribution
folded with the the density of states in the conduction band) and doping
level (where in the bandgap that distribution is centered).
> But, in a P
> type, the holes are derived from the doping element which is bound in
> the lattice. These holes can be filled/emptied, but they can't move.
> Lastly, I can grasp the concept of electrons flowing in a conductor or
> semi-conductor. But, holes don't "flow" in a conductor, right? So, don't
> the holes just stay in the semiconductor?
They do, but you seem to confuse the defect bonds of the p-dopant for the
actual holes (just as you seemed to confuse the defect bonds of an n-type
dopant for a free electron). I don't blame you, you'll find these
illustrations in just about any textbook on that subject, but at a certain
point this gets in the way of understanding what really happens. So, these
are not the electrons and holes you are looking for (waves hand in hope to
complete Jedi mind trick).
You also must not forget that current is a macroscopic quantity (how much
charge goes through a given cut surface averaged over a certain amount of
time), or in other words a statistical moment of the actual movement of many
charges. If your current is 1A through some wire, that doesn't mean you
have 6.241e18 electrons coming through per second like peas through a tube,
it means that of the many more that went back and forth during one second
6.241e18 more went one direction than the other.
Same thing with holes on the microscopic level: "hole" is a convenient
moniker for the (statistical) lack of an electron, which when subjected to
an electrical field behaves like a positive charge. If you look at this
from the Fermi level perspective again, the distribution is shifted towards
the valence band edge or electrons that are bound to the crystal lattice.
Since there are more electrons "in demand" than the crystal can offer, this
will look like a lack of electrons overall. As with the n-type
semiconductor you need thermal energy to actually create these movable
charges, respectively ionize the acceptors. What is really moving is still
electrons (between valence states), but they don't move like electrons do in
an n-type semiconductor (the structure of valence and conduction bands is
different). Instead of talking about "those unfilled places for the sort of
electrons that are moving differently than the other sort of electrons", you
just say "holes".
If you do the math you'll never be sure about how electrons move either,
because each "moving" electron actually has a finite probability to be
_anywhere_ in the whole crystal (periodic infinite boundary conditions...)
and in that sense it actually is _everywhere_ at the same time. At that
point most people are perfectly willing to go back to that picture of
electrons as little blue balls with a "-" stamped onto them rolling around
in some dark alleys in the crystal, since that seems to make more sense. It
is somewhat disconcerting that they are going uphill on the potential
slopes, but that seemingly comes with the "-".
> Maybe I should stick to Lagrangian mechanics...
Well, if you know that, you shouldn't have problems wrapping your head
around the semiconductor equations. Just avoid to picture charges as
objects, or if you must, at least as really, really squishy (but not fuzzy)
ones. :-)
Now you must be confused even more. Sorry.
Achim.
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