[sdiy] MOSFET leakage.
Ian Fritz
ijfritz at earthlink.net
Sun Dec 18 17:05:02 CET 2005
Hi Rene --
>>Following up on the VCO using a MOSFET switch (BS170) that I recently
>>described, I decided to have a try at directly measuring the MOSFET
>>leakage current. Wasn't there some discussion here recently on how to go
>>about this? Here's one way: :-)
>
>Weren't we discussing cap leakage?
Ah, yes. Same technique should work, though, unless the leakage is so
small that the instrumentation current is much larger that what you are
measuring.
>>To make the measurement I used a low leakage opamp (OPA602, I_bias <
>>4pA), with a 10nF cap (feedback configuration) followed by a gain-of-five
>>amplifier.
>
>Did you follow any of the advice that was given in that earlier thread?
>(Dead-bug, Air and Teflon insulation or the like...)
No! Just plugged it all into my whiteboard. :-)
Plastics are actually very good insulators. I remember a friend showing me
that if you pot the contacts of a coax connector with 5-min epoxy then
measure the resistance with an electrometer that the resistance is over
10^14 Ohm. That's roughly the point where you have to go to teflon, etc.
The main worry would be conduction along the surface, but it doesn't seem
to be an actual problem.
>>The leakage current is then the capacitance times the ramp rate, which
>>for the BS170 turned out to be 1.8 pA. (The opamp bias current came out
>>at 0.4 pA.) The corresponding channel resistance is 10^13 Ohms. Yes,
>>you *can* measure these levels at home!
>
>Thats really not bad! Very good! Even more so if you consider that a
>MOSFET can switch more current than a JFET at the high end. So you can
>just raise the cap proportionally and you would still get a very large
>sweep range. Also this shows that one has to interpret the values in
>the datasheets really carefully. Here the current is 500 times lower than
>what you would expect from the datasheet.
What I've been looking at is the speced "drain cutoff current" which is .5
uA. So 2 pA is a factor or 250,000 smaller.
>I have experimented with BS108s as discharge switches in my VCO3, but
>didn't like the effects of the channel capacitance.
>I had to put a small resistor in series with it, since the discharge was
>faster than the integrators OPs slew rate. That tamed the overshoot a bit
>but it was still somewhat dirty.
Yeah, that's what I'm working on. Instead of your series R trick, I'm
using pulse shaping to try to tame the overshoot. Keeping the comparitor
from going into deep saturation seems to help a lot. Also I want to use a
device with less capacitance. The BS170 and 2N7000 units have 60 pF input C.
>>I spent some time yesterday looking for better devices to use for the
>>switch. Speed isn't much of an issue, but lower capacitance would be
>>nice. I found interesting thru hole devices from Supertex (VN2106 and
>>VN0104) and many interesting smd parts from Fairchild and others (BSS138
>>and FDV301N). Anyone have experience with these or any other
>>suggestions? Thanks.
>
>With a larger cap the gate to channel capacitance would have less impact.
Sure. I'm using a 10 nF cap and a 1 V ramp. I don't like to go over 0.5
mA from the expo converter, so that determines my cap size.
>Also don't forget that one could neutralize the capacitance, by putting a
>second one in parallel, which gets a reset signal of opposite direction.
Interesting idea. I'll need to think about that some more. You mean
generate counter-glitches using a second cap?
Ian
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