matching transistors & diodes
David Halliday (Volt Computer)
a-davidh at microsoft.com
Fri Oct 16 18:34:02 CEST 1998
http://www.patents.ibm.com/details?pn=US05414373__
Also, check the base URL http://www.patents.ibm.com/
click on the option for Advanced test search and in the Assignee category,
enter Tandy Corporation. Set it for 1971-present and to return Maximum
Results=200. Leave all the other text fields blank.
Tandy has a lot of interesting patents! The web site tries to point you
towards ordering the patents for $$$ but you can also download each page as
an image to view directly.
-----Original Message-----
From: Paul Schreiber [mailto:synth1 at airmail.net]
Sent: Friday, October 16, 1998 12:23 AM
To: synth-diy at mailhost.bpa.nl; 'Martin Czech'
Subject: RE: matching transistors & diodes
Actually the best way to measure hfe is this "backwards" method
of using a constant current in the collector. This was a HP patent
in one of their board testers (expired), and refined by Doug Curtis & myself
(patent still good!) in the Tandy DVM ASIC we designed. It is part
of the automatic transistor indentification algorithm (the thing which
is actually patented).
Paul Schreiber
Synthesis Technology
----------
From: Martin Czech[SMTP:martin.czech at intermetall.de]
Sent: Friday, October 16, 1998 8:18 AM
To: synth-diy at mailhost.bpa.nl
Subject: matching transistors & diodes
There was a thread about matching transistors & diodes a couple
of weeks ago. We all know the "moog manual" method, constant Ie and
measure Ube. I've found somewhere a note that says : match at least at
two points. That makes sense if the Ic is modulated over a wide range
(like in controlled gain stages).
A switch for two reference currents is all that is needed to do this
with the above mentioned circuit. E.g. the test could be at 500uA and
1uA or so.
At 1uA you get something like the ideal diode characteristics and at
500uA the nonideal resitive component comes out. With only one measurement
point it could well be that two transistors seem to match, because ideal
diode characteristics and resistive components together are equal, this
could cause errors above or below the fixed Ic.
Now we've got two numbers, but we need a scalar to compare the transistors.
How can we come to such a scalar : arithmetic or geometric mean value
of the differences ?
Any ideas?
m.c.
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